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GaN epitaxy engineer to EpinovaTech AB

We are searching for a passionate and self-motivated GaN epitaxy engineer to EpinovaTech AB

Are you an engineer eager to explore new technologies? Do you have experience designing MOCVD recipes and working with epitaxy development?

While EpinovaTech AB is based in Sweden, you don’t need to be. You can work from anywhere, as long as you can visit us when needed.

Join us and become part of our innovative team, driving the future of GaN technology!

Purpose, Offer and Benefits

As GaN Epitaxy Engineer at EpinovaTech AB, you will play a pivotal role in advancing semiconductor technology. You will design GaN MOCVD recipes for GaN HEMT-on-Silicon epi stacks, transitioning from R&D to industrial epiwafers, plan epi runs, utilizing data-driven recipe development, DoEs, and statistical analyses. Contribute to NovaGaN epiwafer engineering and state-of-the-art e-mode GaN HEMT devices.

You will work in a close collaboration with our cross-functional team on process design, yield improvements, and GaN device reliability.

At EpinovaTech, we prioritize our team members´ growth, providing the resources and support necessary for professional development both individually and collectively. If you seek a company that values your growth as much as you do and fosters a culture of innovation and progress, we invite you to join us. We aim high, work hard, and have a lot of fun along the way.

Our headquarters is currently located in Lund, with plans to relocate to Stockholm in 2024. You have the flexibility to work from your home office or at our headquarters — your choice.

Apply today! Screening and interviews are ongoing, so the position may be filled before the application deadline.

Fitness stipend
Fitness stipend
Flexible workplace
Flexible workplace
Health insurance
Health insurance
Pension contributions
Pension contributions

Your Responsibilities

  • Design GaN MOCVD recipes for GaN HEMT-on-Silicon epi stack from R&D to industrial epiwafers
  • Design the epi runs for optimizations of GaN epi layers.
  • Contribute to the engineering of NovaGaN epiwafers and related core technology and state-of-the-art e-mode GaN HEMT devices
  • Work with cross-function teams including NovaGaN process design, yield improvements, GaN device reliability, etc.

The Bigger Picture

EpinovaTech AB address the needs for the fastest growing emerging technologies by introducing a new semiconductor technology that enables the highest power density at lowest weight and cost. We have patented innovations on several levels of the value chain solving key problems from a production quality and scaling perspective as well as on the device level with new architecture further improving performance, applicability and energy savings. We apply a fabless model and work with partners around the world, all experts in their respective field.

Our Expectations

The person we are looking for has en eye for details and thrives in a collaborative environment. To qualify for this role you need:

  • 3 years of experience in GaN MOCVD epitaxy
  • MSc in Chemistry, Nanoscience, Physics, Materials science related field, a PhD in epitaxy or semiconductor physics is a plus
  • Excellent knowledge in GaN epitaxy and related wafer material characterization methods
  • Experience from epitaxy development projects.
  • Excellent proficiency with data handling in Microsoft Excel, Access or similar
  • Previous experience with LED development or HEMT development
  • As a person you are able to work independently, you are accurate with a systematic approach
  • Experience with CFD simulation of MOCVD processes is a plus
  • You are fluent in English
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